FZT458

S MD Type Transistors NPN Silicon Planar High Voltage Transistor FZT458 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features 400 Volt VCEO +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg Rating 400 400 5 300 1 200 2 -55 to +150 Unit V V V A A mA W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT458 Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Currents Emitter Cut-Off Current Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) Base-Emitter Turn On Voltage VBE(on) IC=100ìA IC=10mA* IE=100ìA VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA* IC=50mA, IB=6mA* IC=50mA, IB=5mA* IC=50mA, VCE=10V* IC=1mA, VCE=10V Static Forward Current Transfer Ratio hFE IC=50mA, VCE=10V* IC=100mA, VCE=10V* Transition Frequency Collector-Base Breakdown Voltage Switching times fT Cobo ton toff IC=10mA, VCE=20V,f=20MHz VCB=20V, f=1MHz IC=50mA, VCC=100V IB1=5mA, IB2=-10mA 2% Testconditons Transistors Min 400 400 5 Max Unit V V V 100 100 100 0.2 0.5 0.9 0.9 100 100 15 300 nA nA nA V V V V Emitter Saturation Voltages MHz 5 135 Typical 2260 Typical pF ns ns * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle Marking Marking FZT458 2 www.kexin.com.cn