FZT593

S MD Type PNP Silicon High Voltage Transistor FZT593 SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg Rating -120 -100 -5 -2 -1 -200 2 -55 to +150 Unit V V V A A mA W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT593 Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage VBE(on) IC=-100ìA IC=-10mA* IE=-100ìA VCB=-100V VEB=-4V VCES=-100V IC=-250mA,IB=-25mA* IC=-500mA IB=-50mA* IC=-500mA,IB=-50mA* IC=-1mA, VCE=-5V* IC=-1mA, VCE=-5V Static Forward Current Transfer Ratio hFE IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* Transition Frequency Output Capacitance fT Cobo IC=-50mA, VCE=-10V,f=100MHz VCB=-10V, f=1MHz 2% 100 100 100 50 50 Testconditons Min -120 -100 -5 Transistors Typ. Max Unit V V V -100 -100 -100 -0.2 -0.3 -1.1 -1.0 nA nA nA V V V V Saturation Voltages 300 MHz 5 pF * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle Marking Marking FZT593 2 www.kexin.com.cn