FZT649

S MD Type NPN Silicon Planar High Performance Transistor FZT649 SOT-223 Transistors Unit: mm +0.2 3.50-0.2 Features 25 Volt VCEO. 3 Amp continuous current. Low saturation voltage. Excellent hFE specified up to 6A. +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 35 25 5 3 8 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT649 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO IEBO VCE(sat) VCB=30V VCB=30V,Ta = 100 VEB=4V IC=1A, IB=100mA IC=3A, IB=300mA Testconditons Min 35 25 5 Transistors Typ Max Unit V V V 0.1 10 0.1 0.12 0.40 0.9 0.8 70 100 75 15 150 200 200 150 50 240 25 55 300 50 300 0.30 0.60 1.25 1.0 ìA ìA V V V VBE(sat) IC=1A, IB=100mA VBE(on) IC=1A, VCE=2V IC=50mA, VCE=2V* Static Forward Current Transfer Ratio hFE IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* Transitional frequency Output capacitance Switching times * Pulse test: tp = 300 ìs; d 0.02. fT Cobo ton toff IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA,VCC=10V,IB1=IB2=50mA MHz pF ns ns Marking Marking FZT649 2 www.kexin.com.cn