FZT653

S MD Type Transistors NPN Silicon Planar High Performance Transistor FZT653 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features Low saturation voltage +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 120 100 5 6 2 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT653 Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) IC=100ìA IC=10mA* IE=100ìA VCB=100V VCB=100V,Tamb=100 VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* Static Forward Current Transfer Ratio hFE IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* Transition Frequency Output Capacitance Switching Times fT Cobo ton toff IC=100mA, VCE =5V,f=100MHz VCB=10V, f=1MHz IC=500mA, VCC =10V IB1=IB2=50mA 70 100 55 25 140 Testconditons Min 120 100 5 Transistors Typ. Max Unit V V V 0.1 10 0.1 0.13 0.23 0.9 0.8 200 200 110 55 175 30 80 1200 300 0.3 0.5 1.25 1.0 ìA ìA ìA V V V V MHz pF ns ns * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% Marking Marking FZT653 2 www.kexin.com.cn