FZT657

S MD Type Transistors NPN Silicon Planar Medium Power Transistor FZT657 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features Low saturation voltage +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 300 300 5 1 0.5 2 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo Testconditons IC=100ìA IC=10mA* IE=100ìA VCB=200V VEB=3V IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE =5V* IC=10mA, VCE =5V* IC=100mA, VCE =5V* IC=10mA, VCE =20V,f=20MHz VCB =20V, f=1MHz 40 50 30 20 MHz pF Min 300 300 5 0.1 0.1 0.5 1.0 1.0 Typ. Max Unit V V V ìA ìA V V V * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% Marking Marking FZT657 +0.15 1.65-0.15 www.kexin.com.cn 1