FZT658

S MD Type Transistors NPN Silicon Planar High Voltage Transistor FZT658 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features 400 Volt VCEO Low saturation voltage +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 400 400 5 1 0.5 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT658 Electrical Characteristics Ta = 25 Parameter Breakdown Voltage Breakdown Voltage Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC=100ìA IC=10mA* IE=100ìA VCB=320V VEB=4V IC=20mA, IB=1mA* Collector-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA* IC=100mA, IB=10mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(on) IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=1mA, VCE=5V* Static Forward Current Transfer Ratio hFE IC=100mA, VCE=5V* IC=200mA, VCE=10V* Transition Frequency Output Capacitance Switching Times fT Cobo ton toff IC=10mA, VCE=20V,f=20MHz VCB=20V, f=1MHz IC=100mA, VCC=100V IB1=10mA, IB2=-20mA 50 50 40 50 Testconditons Min 400 400 5 Transistors Typ. Max Unit V V V 100 100 0.3 0.25 0.5 0.9 1.0 nA nA V V V V V MHz 10 130 3300 pF ns ns * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% Marking Marking FZT658 2 www.kexin.com.cn