FZT688B

S MD Type NPN Silicon Planar Medium Power High Gain Transistor FZT688B SOT-223 +0.2 6.50-0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage. +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 12 12 5 4 10 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 Features www.kexin.com.cn 1 SMD Type FZT688B Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO IEBO VCB=10V VEB=4V Testconditons Min 12 12 5 Typ Transistors Max Unit V V V 0.1 0.1 0.04 0.06 0.18 0.35 0.40 1.1 1.0 500 400 100 150 200 40 40 500 ìA ìA Collector-emitter saturation voltage * IC=0.1A, IB=1mA IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=50mA IC=3A, IB=20mA IC=4A, IB=50mA VBE(sat) IC=3A, IB=20mA VBE(on) IC=3A, VCE=2V hFE fT Cibo Cobo t(on) t(off) IC=0.1A, VCE=2V IC=3A, VCE=2V IC=10A, VCE=2V IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, VCC=10V IB1=50A,IB2=50mA V Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * Static Forward Current Transfer Ratio* Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. V V MHz pF pF ns ns Marking Marking FZT688B 2 www.kexin.com.cn