FZT692B

S MD Type NPN Silcon Planar Medium Power High Gain Transistor FZT692B SOT-223 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features High gain + very low saturation voltage. +0.2 6.50-0.2 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 70 70 5 2 5 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT692B Electrical Characteristics Ta = 25 Parameter BreakdownVoltages BreakdownVoltages BreakdownVoltages Cut-Off Currents Cut-Off Currents Saturation Voltages* Saturation Voltages Base-emitter ON voltage * Static Forward Current Transfer Ratio * Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA * V(BR)EBO IE=100ìA ICBO IEBO VCB=55V VEB=4V Testconditons Min 70 70 5 Typ Transistors Max Unit V V V 0.1 0.1 0.15 0.5 0.5 0.9 0.9 500 400 150 150 200 12 46 1440 ìA ìA V V V IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=10mA IC=2A, IB=200mA VBE(sat) IC=1A, IB=10mA VBE(on) IC=1A, VCE=2V hFE fT Cibo Cobo t(on) t(off) IC=100mA, VCE=2V IC=500mA, VCE=2V IC=1A, VCE=2V IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA MHz pF pF ns ns Marking Marking FZT692B 2 www.kexin.com.cn