FZT749

S MD Type NPN Silicon Planar Medium Power Transistor FZT749 Features 25 Volt VCEO. 3 Amp continuous current. Low saturation voltage. Excellent hFE specified up to 6A . +0.1 3.00-0.1 Transistors SOT-223 +0.2 6.50-0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -35 -25 -5 -8 -3 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT749 Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Currents Collector Cut-Off Currents Saturation Voltages * Saturation Voltages * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-30V VCB=-30V,Ta = 100 VEB=4V Testconditons Min -35 -25 -5 Transistors Typ Max Unit V V V -0.1 -10 -0.1 -0.12 -0.40 -0.9 -0.8 70 100 75 15 100 200 200 150 50 160 55 40 450 100 300 -0.3 -0.6 -1.25 -1.0 ìA ìA V V V IC=-1A, IB=-100mA VCE(sat) IC=-3A, IB=-300mA VBE(sat) IC=-1A, IB=-100mA VBE(on) IC=-1A, VCE=-2V IC=-50mA, VCE=-2V* Static Forward Current Transfer Ratio hFE IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=-100mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA MHz pF ns ns Marking Marking FZT749 2 www.kexin.com.cn