FZT751

S MD Type High Performance Transistor FZT751 SOT-223 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features 60 Volt VCEO. 3 Amp continuous current. Low saturation voltage. +0.2 6.50-0.2 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -80 -60 -5 -6 -3 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT751 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCE(sat) VCB=-60V VCB=-60V,Ta = 100 VEB=-4V IC=-1A, IB=-100mA IC=-3A, IB=-300mA Testconditons Min -80 -60 -5 Transistors Typ Max Unit V V V -0.1 -10 -0.1 -0.15 -0.45 -0.9 -0.8 70 100 80 40 100 200 200 170 150 140 30 40 450 300 -0.3 -0.6 -1.25 -1.0 ìA ìA V V V VBE(sat) IC=-1A, IB=-100mA VBE(on) IC=-1A, VCE=-2V IC=-50mA, VCE =-2V* Collector Cut-Off Current Transfer Ratio * hFE IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=-100mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA MHz pF ns ns Marking Marking FZT751 2 www.kexin.com.cn