FZT753

S MD Type Transistors PNP Silicon Planar Medium Power Transistor FZT753 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Low saturation voltage Excellent hFE specified up to 2A +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating -120 -100 -5 -6 -2 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 Features www.kexin.com.cn 1 SMD Type FZT753 Electrical Characteristics Ta = 25 unless otherwise stated Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) IC=-100ìA IC=-10mA* IE=-100ìA VCB=-100V VCB=-100V,Tamb=100 VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE =-2V* Static Forward Current Transfer Ratio hFE IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* Transition Frequency Output Capacitance Switching Times fT Cobo ton toff * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% IC=-100mA, VCE=-5V,f=100MHz VCB =-10V f=1MHz IC=-500mA, VCC =-10V,IB1=IB2=-50mA Testconditons Transistors Min -120 -100 -5 Typ. Max Unit V V V -0.1 -10 -0.1 -0.17 -0.30 -0.9 -0.8 70 100 55 25 100 200 200 170 55 140 30 40 600 300 -0.3 -0.5 -1.25 -1.0 ìA ìA ìA V V V V MHz pF ns ns Marking Marking FZT753 2 www.kexin.com.cn