S MD Type
PNP Silicon Planar Medium Power High Gain Transistor FZT788B
SOT-223
+0.2 6.50-0.2
Transistors
Unit: mm
+0.2 3.50-0.2
0.1max +0.05 0.90-0.05
Low equivalent on-resistance; RCE(sat) 93mÙ at 3A. Gain of 300 at IC=2 Amps and Very low saturation voltage.
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1
2 2.9 4.6
3
+0.1 0.70-0.1
1 base 2 collector 3 emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -15 -15 -5 -8 -3 2 -55 to +150 Unit V V V A A W
+0.15 1.65-0.15
Features
www.kexin.com.cn
1
SMD Type
FZT788B
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector-base cut-off current Emitter Cut-Off Current Symbol Testconditons Min -15 -15 -5 Typ
Transistors
Max
Unit V V V
V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-10V VEB=-4V IC=-0.5A, IB=-2.5mA IC=-1A, IB=-5mA IC=-2A, IB=-10mA IC=-3A, IB=-50mA
-0.1 -0.1 -0.15 -0.25 -0.45 -0.5 -0.9 -0.75 500 400 300 150 100 225 25 35 400 1500
ìA ìA
Collector-emitter saturation voltage *
VCE(sat)
V
Base-emitter saturation voltage * Base-emitter ON voltage *
VBE(sat) IC=-1A, IB=-5mA VBE(on) IC=-1A, VCE=-2V IC=-10mA,VCE=-2V *
V V
Static Forward Current Transfer Ratio
hFE
IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V*
Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02.
fT Cibo Cobo t(on) t(off)
IC=-50mA, VCE=-5V, f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA
MHz pF pF ns ns
Marking
Marking FZT788B
2
www.kexin.com.cn
很抱歉,暂时无法提供与“FZT788B”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 1+2.727
- 10+2.626
- 100+2.3836
- 500+2.2624