S MD Type
NPN Silicon Planar Medium Power High Gain Transistor FZT789A
SOT-223
+0.2 6.50-0.2
Transistors
Unit: mm
+0.2 3.50-0.2
Low equivalent on-resistance; RCE(sat) 93mÙ at 3A. Gain of 300 at IC=2 Amps and Very low saturation voltage.
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1
2 2.9 4.6
3
+0.1 0.70-0.1
1 base 2 collector 3 emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -25 -25 -5 -6 -3 2 -55 to +150 Unit V V V A A W
+0.15 1.65-0.15
Features
0.1max +0.05 0.90-0.05
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1
SMD Type
FZT789A
Electrical Characteristics Ta = 25
Parameter Breakdown Voltages Breakdown Voltages * Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current Saturation Voltages * Saturation Voltages * Base-Emitter Turn-On Voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-15V VCB=-15V,Ta = 100 VEB=-4V Testconditons Min -25 -25 -5 Typ -40 -35 -8.5
Transistors
Max
Unit V V V
-0.1 10 -0.1 -0.15 -0.25 -0.30 -0.45 -0.30 -0.50 -0.8 -0.8 300 250 200 100 100 225 25 35 400 800 -1.0
ìA ìA V V V
IC=-1A, IB=-10mA VCE(sat) IC=-2A, IB=-20mA IC=-3A, IB=-100mA VBE(sat) IC=-1A, IB=-10mA VBE(on) IC=-1A, VCE=-2V IC=-10mA, VCE=-2V
Static Forward Current Transfer Ratio
hFE
IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V*
Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02.
fT Cibo Cobo t(on) t(off)
IC=-50mA, VCE=-5V, f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA
MHz pF pF ns ns
Marking
Marking FZT789A
2
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