FZT790A

S MD Type PNP Silicon Planar Medium Power High Gain Transistor FZT790A SOT-223 Transistors Unit: mm +0.2 3.50-0.2 Features Low equivalent on-resistance; RCE(sat) 125mÙ at 2A. Gain of 200 at IC=1 Amps and Very low saturation voltage. +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -50 -40 -5 -6 -3 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT790A Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Base-EmitterTurn-OnVoltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-30V VCB=-30V,Ta = 100 VEB=-4V Testconditons Min -50 -40 -5 Typ -70 -60 -8.5 Transistors Max Unit V V V -0.1 -10 -0.1 -0.15 -0.25 -0.30 -0.45 -0.40 -0.75 -0.8 -0.75 300 250 200 150 100 24 35 600 800 -1.0 ìA ìA V V V IC=-500mA, IB=-5mA VCE(sat) IC=-1A, IB=-10mA IC=-2A, IB=-50mA VBE(sat) IC=-1A, IB=-10mA VBE(on) IC=-1A, VCE=-2V IC=-10mA, VCE=-2V Static Forward Current Transfer Ratio hFE IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=-50mA, VCE=-5V, f=50MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA MHz pF ns ns Marking Marking FZT790A 2 www.kexin.com.cn