FZT849

S MD Type NPN Silicon Planar High Current (High Performance) Transistor FZT849 SOT-223 Transistors Unit: mm +0.2 3.50-0.2 Features Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A. 7 Amp continuous collector current (20 Amp peak). +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 Very low saturation voltages. Excellent gain charateristics specified upto 20 Amp. Ptot = 3 Watts. 1 2 2.9 4.6 3 +0.1 0.70-0.1 4 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 80 30 6 7 20 3 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT849 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO IEBO VCB=70V VCB=70V,Ta = 100 VEB=6V Testconditons Transistors Min 80 30 6 Typ 120 40 8 Max Unit V V V 50 1 10 35 67 168 50 110 215 350 1.2 1.13 100 100 100 30 200 200 150 65 100 75 45 630 300 nA ìA nA Collector-emitter saturation voltage * IC=0.5A, IB=20mA VCE(sat) IC=1A, IB=20mA IC=2A, IB=20mA IC=6.5A, IB=300mA VBE(sat) IC=6.5A, IB=300mA VBE(on) IC=6.5A, VCE=1V IC=10mA, VCE=1V mV Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * V V Static Forward Current Transfer Ratio hFE IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=1A, VCC=10V IB1=IB2=100mA MHz pF ns ns Marking Marking FZT849 2 www.kexin.com.cn