FZT851

S MD Type NPN Silicon Planar High Current (High Performance)Transistor FZT851 SOT-223 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 6 Amps continuous current, up to 20 Amps peak current. Very low saturation voltages. Excellent hFE characteristics specified up to 10 Amps. +0.2 6.50-0.2 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 150 60 6 6 20 3 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT851 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO IEBO VCB=120V VCB=120V,Ta = 100 VEB=6V Testconditons Transistors Min 150 60 6 Typ Max Unit V V V 50 1 10 50 100 170 375 1200 1150 100 100 75 25 200 200 120 50 130 45 45 1100 300 nA ìA nA Collector-emitter saturation voltage * IC=0.1A, IB=5mA VCE(sat) IC=1A, IB=50mA IC=2A, IB=50mA IC=6A, IB=300mA VBE(sat) IC=6A, IB=300mA VBE(on) IC=6A, VCE=1V IC=10mA, VCE=1V mV Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * mV mV Static Forward Current Transfer Ratio* hFE IC=2A, VCE=1V* IC=5A, VCE=1V* IC=10A, VCE=1V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=1A, VCC=10V IB1=IB2=100mA MHz pF ns ns Marking Marking FZT851 2 www.kexin.com.cn