S MD Type
Transistors
NPN Silicon Planar High Current Transistor FZT853
SOT-223
6.50
+0.2 -0.2
Unit: mm
+0.2 3.50-0.2
0.1max +0.05 0.90-0.05
Features
Extremely low equivalent on-resistance; RCE(sat) 44mÙ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps
1 2 2.9 4.6 3
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1 Base 2 Collector
+0.1 0.70-0.1
3 Emitter 4 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 200 100 6 10 6 3 -55 to +150 Unit V V V A A W
+0.15 1.65-0.15
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1
SMD Type
FZT853
Electrical Characteristics Ta = 25
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current
Transistors
unless otherwise stated
Symbol V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO IC=100ìA IC=1ìA, RB 1KÙ IC=10mA* IE=100ìA VCB=120V VCB=120V,Tamb=100 Testconditons Min 150 150 60 6 Typ 220 220 85 8 50 1 50 1 10 50 100 170 375 1200 1150 100 100 75 25 200 200 120 50 130 45 45 1100 MHz pF ns ns 300 Max Unit V V V V nA ìA nA ìA nA mV mV mV mV mV V
Collector Cut-Off Current R 1KÙ Emitter Cut-Off Current
ICER IEBO
VCB=120V VCB=120V,Tamb=100 VEB=6V IC=0.1A, IB=50mA*
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=50mA* IC=2A, IB=50mA* IC=6A, IB=300mA*
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage
VBE(sat) VBE(on)
IC=6A, IB=300mA* IC=6A, VCE=1V* IC=10mA, VCE=1V
Static Forward Current Transfer Ratio
hFE
IC=2A, VCE=1V* IC=5A, VCE=1V* IC=10A, VCE=1V*
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
IC=100mA, VCE=10V,f=50MHz VCB=10V, f=1MHz IC=1A, IB1=100mA IB2=100mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
2
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