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FZT853

FZT853

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    FZT853 - NPN Silicon Planar High Current Transistor - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
FZT853 数据手册
S MD Type Transistors NPN Silicon Planar High Current Transistor FZT853 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE(sat) 44mÙ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps 1 2 2.9 4.6 3 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 200 100 6 10 6 3 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT853 Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Transistors unless otherwise stated Symbol V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO IC=100ìA IC=1ìA, RB 1KÙ IC=10mA* IE=100ìA VCB=120V VCB=120V,Tamb=100 Testconditons Min 150 150 60 6 Typ 220 220 85 8 50 1 50 1 10 50 100 170 375 1200 1150 100 100 75 25 200 200 120 50 130 45 45 1100 MHz pF ns ns 300 Max Unit V V V V nA ìA nA ìA nA mV mV mV mV mV V Collector Cut-Off Current R 1KÙ Emitter Cut-Off Current ICER IEBO VCB=120V VCB=120V,Tamb=100 VEB=6V IC=0.1A, IB=50mA* Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=50mA* IC=2A, IB=50mA* IC=6A, IB=300mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(on) IC=6A, IB=300mA* IC=6A, VCE=1V* IC=10mA, VCE=1V Static Forward Current Transfer Ratio hFE IC=2A, VCE=1V* IC=5A, VCE=1V* IC=10A, VCE=1V* Transition Frequency Output Capacitance Switching Times fT Cobo ton toff IC=100mA, VCE=10V,f=50MHz VCB=10V, f=1MHz IC=1A, IB1=100mA IB2=100mA, VCC=10V *Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2% 2 www.kexin.com.cn
FZT853 价格&库存

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