FZT857

S MD Type Transistors NPN Silicon Planar High Current Transistor FZT857 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features Up to 3.5 Amps continuous collector current, up to 5 Amp peak VCEO = 300V Very low saturation voltage Excellent hFE specified up to 3 Amps 1 2 2.9 4.6 3 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 350 300 6 5 3.5 3 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT857 Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Transistors unless otherwise stated Symbol V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO IC=100ìA IC=1ìA, RB 1KÙ IC=10mA* IE=100ìA VCB=300V VCB=300V,Tamb=100 Testconditons Min 350 350 300 6 Typ 475 475 350 8 50 1 50 1 10 100 155 230 345 1250 1.12 100 100 15 200 200 25 15 80 11 100 5300 MHz pF ns ns 300 Max Unit V V V V nA ìA nA ìA nA mV mV mV mV mV V Collector Cut-Off Current R 1KÙ Emitter Cut-Off Current ICER IEBO VCB=300V VCB=300V,Tamb=100 VEB=6V IC=500mA, IB=50mA* Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=100mA* IC=2A, IB=200mA* IC=3.5A, IB=600mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(on) IC=3.5A, IB=600mA* IC=3.5A, VCE=10V* IC=10mA, VCE=5V Static Forward Current Transfer Ratio hFE IC=500mA, VCE=10V* IC=2A, VCE=10V* IC=3A, VCE=10V* Transition Frequency Output Capacitance Switching Times fT Cobo ton toff IC=100mA, VCE=10V,f=50MHz VCB=20V, f=1MHz IC=250mA, IB1=25mA IB2=25mA, VCC=50V *Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2% Marking Marking FZT857 2 www.kexin.com.cn