FZT949

S MD Type PNP Silicon Planar High Current (High Performance) Transistor FZT949 SOT-223 Transistors Unit: mm +0.2 3.50-0.2 Features Extremely low equivalent on-resistance; RCE(sat). 6 Amps continuous current. Up to 20 Amps peak current. Very low saturation voltage. Excellent hFE characteristics specified upto 20 Amps. 1 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -50 -30 -6 -20 -5.5 3 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT949 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-40V VCB=-40V,Ta = 100 VEB=-6V IC=-0.5A, IB=-10mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-6A, IB=-250mA* Testconditons Transistors Min -50 -30 -50 Typ -80 -45 -80 Max Unit V V V -50 -1 -10 -50 -85 -190 -350 -75 -140 -270 -440 nA ìA nA Collector-emitter saturation voltage * VCE(sat) V Base-emitter saturation voltage * Base-emitter ON voltage * VBE(sat) IC=-5.5A, IB=-500mA VBE(on) IC=-5.5A, VCE=-1V IC=-10mA, VCE =-1V 100 100 75 -1100 -1250 -900 200 200 140 35 100 122 120 130 300 -1060 V V Static Forward Current Transfer Ratio hFE IC=-1A, VCE =-1V* IC=-5A, VCE =-1V* IC=-20A, VCE =-2V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=-100mA, VCE=-10V, f=50MHz VCB=-10V, f=1MHz IC=-4A, VCC=-10V IB1=IB2=-400mA MHz pF ns ns 2 www.kexin.com.cn