FZT951

S MD Type Transistors PNP Silicon Planar High Current Transistors FZT951 SOT-223 Unit: mm +0.2 3.50-0.2 Features 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 Excellent gain characteristics specified up to 10 Amps. Ptot = 3 watts. FZT951 exhibts extremely low equivalent on resistance; RCE(sat) 55mÙ at 4A. 1 2 2.9 4.6 3 +0.1 0.70-0.1 4 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -100 -60 -6 -15 -5 3 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT951 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-80V VCB=-80V,Ta = 100 VEB=-6V IC=-100mA, IB=-10mA IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-5A, IB=-500mA Testconditons Min -100 -60 -6 Transistors Typ -140 -90 -8 Max Unit V V V -50 1 -10 -20 -85 -155 -137 -50 -140 -210 -460 nA ìA nA Collector-emitter saturation voltage * VCE(sat) V Base-emitter saturation voltage * Base-emitter ON voltage * VBE(sat) IC=-5A, IB=-500mA VBE(on) IC=-5A, VCE=-1V IC=-10mA, VCE=-1V* 100 100 75 10 -1080 -1240 -935 200 200 90 25 120 74 82 350 300 -1070 V V Static Forward Current Transfer Ratio* hFE IC=-2A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=-100mA, VCE=-10V, f=50MHz VCB=-10V, f=1MHz IC=-2A, VCC=-10V IB1=IB2=-200mA MHz pF ns ns 2 www.kexin.com.cn