FZT953

S MD Type Transistors PNP Silicon Planar High Current Transistors FZT953 SOT-223 Unit: mm +0.2 3.50-0.2 Features 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. Excellent gain characteristics specified up to 10 Amps. Ptot = 3 watts. +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -140 -100 -6 -10 -5 3 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type FZT953 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-100V VCB=-100V,Ta = 100 VEB=-6V Testconditons Transistors Min -140 -100 -6 Typ -170 -120 -8 Max Unit V V V -50 -1 -10 -20 -90 -160 -300 -50 -115 -220 -420 nA ìA nA Collector-emitter saturation voltage * IC=-100mA, IB=-10mA IC=-1A, IB=-100mA VCE(sat) IC=-2A, IB=-200mA IC=-4A, IB=-400mA VBE(sat) IC=-4A, IB=-400mA VBE(on) IC=-4A, VCE=-1V IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* 100 100 50 30 V Base-emitter saturation voltage * Base-emitter ON voltage * -1010 -1170 -925 200 200 90 50 15 125 65 110 460 300 -1160 V V Static Forward Current Transfer * hFE IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. fT Cobo t(on) t(off) IC=-100mA, VCE=-10V, f=50MHz VCB=-10V, f=1MHz IC=-2A, VCC=-10V IB1=IB2=-200mA MHz pF ns ns 2 www.kexin.com.cn