S MD Type
Transistors
NPN Silicon Planar High Voltage Transistor FZTA42
SOT-223
6.50
+0.2 -0.2
Unit: mm
+0.2 3.50-0.2
0.1max +0.05 0.90-0.05
Features
Suitable for video output stages in TV sets and switch mode power supplies High breakdown voltage
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1 Base
1 2 2.9 4.6 3
+0.1 0.70-0.1
2 Collector 3 Emitter 4 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IB IC Ptot Tj:Tstg Rating 300 300 5 100 500 2 -55 to +150 Unit V V V mA mA W
Electrical Characteristics Ta = 25
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) Testconditons IC=100ìA, IE=0 IC=1mA, IB=0* IE=100ìA, IC=0 VCB=200V, IE=0 VEB=5V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA IC=1mA, VCE=10V* Static Forward Current Transfer Ratio hFE IC=10mA, VCE=10V* IC=30mA, VCE=10V* Transition Frequency Output Capacitance fT Cobo IC=10mA, VCE=20V,f=20MHz VCB=20V, f=1MHz 2% 25 40 40 50 6 MHz pF Min 300 300 5 0.1 0.1 0.5 0.9 Typ Max Unit V V V ìA ìA V V
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
+0.15 1.65-0.15
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