FZTA92

S MD Type Transistors PNP Silicon Planar High Voltage Transistor FZTA92 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features High breakdown voltage +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25° C Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IB IC Ptot Tj:Tstg Rating -300 -300 -5 -100 -500 2 -55 to +150 Unit V V V mA mA W Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) Testconditons IC=-100ìA, IE=0 IC=-1mA, IB=0* IE=-100ìA, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA IC=-1mA, VCE=-10V* Static Forward Current Transfer Ratio hFE IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* Transition Frequency Output Capacitance fT Cobo IC=-10mA, VCE=-20V,f=20MHz VCB=-20V, f=1MHz 2% 25 40 25 50 6 MHz pF Min -300 -300 -5 -0.25 -0.1 -0.5 -0.9 Typ Max Unit V V V ìA ìA V V * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle +0.15 1.65-0.15 www.kexin.com.cn 1