H8050

S MD Type NPN General Purpose Transistors H8050 SOT-89 Transistors Unit: mm 1.50 +0.1 -0.1 ■ Features ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=1.5A 1 +0.1 0.48-0.1 4.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 1. Base 2. Collector 3. Emiitter +0.1 3.00-0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 1.5 0.5 150 -55 to +150 Unit V V V A W ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter positive favor voltage output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE Testconditons IC= 100μA, IE=0 IC= 0.1mA, IB=0 IE= 100μA, IC=0 VCB= 40 V,IE=0 VCE= 20V, IB=0 VEB= 5V, IC=0 VCE= 1V, IC= 100mA VCE= 1V, IC= 800mA VCE(sat) IC=800mA, IB= 80mA VBE(sat) IC=800mA, IB=80mA VBE(on) Ic=1V,VCE=10mA VBEF Cob fT IB=1A VCB=10V,IE=0,f=1MHz VCE= 10V, IC=50mA 100 85 40 0.5 1.2 1 1.55 15 V V V V pF MHz Min 40 25 5 0.1 0.1 0.1 400 Typ Max Unit V V V μA μA μA ■ hFE Classification Rank hFE B 85 ～ 160 C 120～200 D 160～300 D3 300～400 www.kexin.com.cn 1 SMD Type H8050 ■ Typical Characteristics 0.5 1000 Transistors VCE = 1V IC[mA], COLLECTOR CURRENT IB = 3.0mA 0.4 IB = 2.5mA 0.3 hFE, DC CURRENT GAIN 2.0 100 IB = 2.0mA IB = 1.5mA 0.2 10 IB = 1.0mA 0.1 IB = 0.5mA 1 0.1 0 0.4 0.8 1.2 1.6 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 10000 100 IC = 10 IB VCE = 1V V BE(sat) 1000 IC[mA], COLLECTOR CURRENT 10 100 1000 10 100 1 V CE(sat) 10 0.1 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 f = 1MHz VCE = 10V Cob [pF], CAPACITANCE 100 100 10 10 1 1 10 100 1 1 10 100 400 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product www.kexin.com.cn 2