HR1A3M

S MD Type Digital Transistors HR1A3M Transistors Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Total Power Dissipation Junction temperature Storage temperature *1 PW 10ms, Duty Cycle 50% Symbol VCBO VCEO VEBO IC(DC) IC(pulse) *1 IB(DC) PT *2 Tj Tstg Rating -60 -60 -10 -1.0 -2.0 -0.02 2.0 150 -55 to +150 Unit V V V A A A W *2 When 0.7mm x 16cm2 ceramic board is used. Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Symbol ICBO Testconditons VCB = -60V, IE = 0 VCE = -2.0V , IC = -0.1A DC Current Gain hFE * VCE = -2.0V , IC = -0.5A VCE = -2.0V , IC = -1.0A Low Level Output Voltage Low Level Input Voltage Input Resistance Emitter-Base Resistance * PW 350 s, Duty Cycle 2% VOL * VIL * R1 R2 VIN = -5.0V, IC = -0.4A VCE = -5.0V, IC = -100 A 0.7 0.7 1.0 1.0 50 100 50 -0.4 -0.3 1.3 1.3 V V k k Min Typ Max -100 Unit nA www.kexin.com.cn 1 SMD Type HR1A3M Marking Marking MP Transistors Equivalent Circuit Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type HR1A3M Transistors www.kexin.com.cn 3