S MD Type
Silicon Schottky Barrier Diode HRW0202B
Diodes
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
Low forward voltage drop and suitable for high effifiency rectifying. MPAK package is suittable for high density surface mounting and high speed assembly.
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t N o n -re p e titiv e p e a k fo rw a rd s u rg e c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol V RRM IO IF S M Tj T s tg V a lu e 20 200 3 125 -5 5 to + 1 2 5 U n it V mA A
Electrical Characteristics Ta = 25
Param eter Forward voltage Reverse current Therm al resistance Sym bol VF IR T sh( j-a ) Conditions I F = 100 m A V R = 20 V Polyim ide board 400 Min Typ Max 0.42 10 Unit V A /W
Marking
Marking S18
+0.1 0.38-0.1
0-0.1
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