HRW0503A

S MD Type Silicon Schottky Barrier Diode HRW0503A Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low forward voltage drop and suitable for high effifiency rectifying. MPAK package is suittable for high density surface mounting and high speed assembly. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titive p e a k re ve rs e vo lta g e A ve ra g e re c tifie d c u rre n t N o n -re p e titive p e a k fo rw a rd s u rg e c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re N o te 1 . 5 0 H z s in e w a ve 1 p u ls e IF S M S ym b o l V RRM IO (N o t e 1 ) V a lu e 30 500 5 125 -5 5 to + 1 2 5 U n it V mA A Tj T s tg Electrical Characteristics T a = 25 Param eter Forward voltage Reverse current Capacitance Sym bol VF IR C Conditions I F = 500 m A V R = 30 V V R = 0 V, f = 1MHz 65 Min Typ Max 0.55 50 Unit V A pF Marking Marking S6 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1