HSB88WA

S MD Type Silicon Schottky Barrier Diode HSB88WA Diodes Features Low reverse current, Low capacitance. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VR IO Tj T s tg V a lu e 10 15 125 -5 5 to + 1 2 5 U n it V mA Electrical Characteristics Ta = 25 Parameter Forward voltage Symbol VF Conditions IF =1 mA IF =10 mA Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capability (Note 1) Note 1. Failure criterion ; IR 0.4 A at V R =2 V IR C ÄC ÄV F V R =2 V V R =10 V V R = 0 V, f = 1 MHz V R = 0V, f = 1 MHz IF = 10 mA C=200 pF, R= 0 Both forward and 30 Min 0.35 0.50 Typ Max 0.42 0.58 0.2 10 0.80 0.10 10 A pF pF mV V Unit V reverse direction 1 pulse. Marking Marking C7 www.kexin.com.cn 1