HSC276

S MD Type Silicon Schottky Barrier Diode HSC276 Diodes SOD-523 +0.05 0.3-0.05 +0.1 1.2-0.1 Unit: mm +0.1 0.6-0.1 High forward current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design. +0.05 0.8-0.05 Features + - +0.1 1.6-0.1 0.77max 0.07max A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e v e rs e V o lta g e A v e ra g e re c tifie d c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol VR IO Tj T s tg V a lu e 3 30 125 -5 5 to + 1 2 5 U n it V mA Electrical Characteristics Ta = 25 Param eter Reverse voltage Reverse current Forward voltage Capacitance ESD-Capability (Note 1) Note 1. Failure criterion ; I R 100m A at VR =0.5 V Sym bol VR IR IF C Conditions I R = 10 A M in 30 0.5 35 0.85 30 Typ M ax Unit V A mA pF V V R = 0.5 V V R = 0.5 V V R = 0.5 V, f = 1 M Hz C=200pF , Both forward and reverse direction 1 pulse. Marking Marking C2 +0.05 0.1-0.02 www.kexin.com.cn 1