IRLML2402

MOSFET SMD Type N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● ID = 1.2 A( VGS = 4.5V) 1 ● RDS(ON) ＜ 250mΩ (VGS = 4.5V) 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 D +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● RDS(ON) ＜ 350mΩ (VGS = 2.7V) 0.55 ● VDS (V) = 20V +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ■ Features 0-0.1 +0.1 0.38 -0.1 1. Gate G 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 TA=25℃ Continuous Drain Current ID TA=70℃ Pulsed Drain Current Power Dissipation TA=25℃ (Note.1) Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Note.1: ISD ≤ ≤ ≤ V 1.2 0.95 A IDM 7.4 PD 540 mW 4.3 mW/℃ dv/dt 5 V/ns RthJA 230 ℃/W TJ 150 Tstg -55 to 150 Linear Deraing Factor Peak Diode Recovery dv/dt Unit ℃ ≤ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET IRLML2402 (KRlML2402) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA Static Drain-Source On-Resistance RDS(On) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Min Typ Max 20 ID=250μA, VGS=0V V VDS=16V, VGS=0V 1 VDS=16V, VGS=0V, TJ=125℃ 25 VGS=4.5V, ID=0.93A 0.7 (Note.1) VGS=2.7V, ID=0.47A nA 1.5 V 350 1.3 110 VGS=0V, VDS=15V, f=1MHz pF 51 25 VGS=16V, VDS=4.5V, ID=0.93A (Note.1) 2.6 3.9 0.41 0.62 1.1 1.7 Diode Forward Voltage VSD Note.1: ≤ ■ Marking Marking 2 1A** www.kexin.com.cn ≤ nC 2.5 VDS=10V, ID=0.93A, RD=11Ω,RG=6.2Ω (Note.1) 9.5 ns 9.7 4.8 IF= 0.93A, dI/dt= 100A/μs,TJ = 25℃ (Note.1) D 25 38 16 24 A S IS=0.93A,VGS=0V,TJ = 25℃ nC 0.54 G ISM mΩ S showing the Pulse Source Current (Body Diode) uA ±100 250 (Note.1) VDS=10V, ID=0.47A Unit (Note.1) 7.4 1.2 V MOSFET SMD Type N-Channel MOSFET IRLML2402 (KRlML2402) ■ Typical Characterisitics 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 10 1 0.1 1.5V 0.01 0.1 20µs PULSE WIDTH TJ = 25°C A 1 10 VDS , Drain-to-Source Voltage (V) 1 1.5V 0.1 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 TJ = 25°C I D , Drain-to-Source Current (A) 10 0.01 0.1 10 TJ = 150°C 1 0.1 0.01 V DS = 10V 20µs PULSE WIDTH 1.5 2.0 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP 2.5 3.0 3.5 1.0 0.5 V GS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Coss 80 Crss 40 0 1 10 VDS , Drain-to-Source Voltage (V) VGS = 4.5V 0 20 40 60 A 80 100 120 140 160 TJ , Junction Temperature (°C) Ciss 120 10 1.5 0.0 -60 -40 -20 A 4.0 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 160 1 VDS , Drain-to-Source Voltage (V) I D = 0.93A VGS , Gate-to-Source Voltage (V) 200 20µs PULSE WIDTH TJ = 150°C A 100 A I D = 0.93A VDS = 16V 8 6 4 2 0 0.0 FOR TEST CIRCUIT SEE FIGURE 9 1.0 2.0 3.0 A 4.0 Q G , Total Gate Charge (nC) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET IRLML2402 (KRlML2402) ■ Typical Characterisitics 100 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 150°C I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 1 TJ = 25°C 0.1 0.01 VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 A 1.4 10 100µs 1 0.1 1ms TA = 25°C TJ = 150°C Single Pulse 1 10ms A 10 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) 100 QG QGS QGD + - VG 1 0.1 % Charge Current Regulator Same Type as D.U.T. . 50K 12V .2∝F 90% .3∝F D.U.T. 3mA td(on) IG ID Current Sampling Resistors www.kexin.com.cn + V - DS 10% VGS VGS 4 VDS tr t d(off) tf MOSFET SMD Type N-Channel MOSFET IRLML2402 (KRlML2402) ■ Typical Characterisitics Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 1 10 Driver Gate Drive + P.W. 100 Period D= P.W. Period VGS=10V D.U.T. ISD Waveform + - - Reverse Recovery Current + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD www.kexin.com.cn 5