KC808

S MD Type PNP Silicon AF Transistors KC808(BC808) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -30 -25 -5 -800 310 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-baser breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base emitter on voltage Output Capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% Symbol VCBO VCEO VEBO ICES IEBO hFE IC = -300 mA, VCE = -1 V VCE(sat) IC = -500 mA, IB = -50 mA VBE(on) VCE=-1V,IC=300mA Cob fT VCB=-10V,f=1MHz IC = -10 mA, VCE = -5 V, f = 50 MHz 100 60 -0.7 -1.2 12 V V pF MHz IC = -10 Testconditons A,VBE = 0 Min -30 -25 -5 -100 -100 100 630 Typ Max Unit V V V nA nA IC = -10 mA, IB = 0 IE = -10 A, IC = 0 VCB = -25 V, VBE= 0 VEB = -4 V, IC = 0 IC = -100 mA, VCE = -1 V Marking NO. Marking hFE KC808-16 9GA 100 250 KC808-25 9GB 160 400 KC808-40 9GC 250 630 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1