KC817A

S MD Type NPN Silicon AF Transistors KC817A(BC817A) SOT-23 Transistors Unit: mm For general AF applications. +0.1 2.4-0.1 High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating 50 45 5 500 1 100 310 150 -65 to +150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC817A-16 DC current gain * Collector saturation voltage * Base to emitter voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% KC817A-25 KC817A-40 VCE(sat) IC = 500 mA, IB = 50 mA VBE(sat) IC = 500 mA, IB = 50 mA CCb Ceb fT VCB = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 6 60 170 hFE IC = 100 mA, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO IC = 10 Testconditons A, IE = 0 Min 50 45 5 100 50 100 100 160 250 160 250 350 250 400 630 0.7 1.2 V V pF pF MHz Typ Max Unit V V V nA A nA IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 VEB = 4 V, IC = 0 Marking NO. Marking KC817A-16 6A KC817A-25 6B KC817A-40 6C +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1