KC817W

S MD Type NPN Silicon AF Transistors KC817W Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating 50 45 5 500 1 100 250 150 -65 to +150 Unit V V V mA A mA mW Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current KC817-16W DC current gain * Collector saturation voltage * Base to emitter voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% KC817-25W KC817-40W VCE(sat) IC = 500 mA, IB = 50 mA VBE(sat) IC = 500 mA, IB = 50 mA CCb Ceb fT VCB = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 6 60 170 hFE IC = 100 mA, VCE = -1 V Symbol VCBO VCEO VEBO ICBO IEBO IC = 10 Testconditons A, IE = 0 Min 50 45 5 100 50 100 100 160 250 160 250 350 250 400 630 0.7 1.2 V V pF pF MHz Typ Max Unit V V V nA A nA IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 VEB = 4 V, IC = 0 Marking NO. Marking KC817-16W 6A KC817-25W 6B KC817-40W 6C www.kexin.com.cn 1