KC846S

S MD Type NPN Silicon AF Transistors Array KC846S(BC846S) Transistors SOT-363 1.3 +0.1 -0.1 Unit: mm 0.65 0.525 For AF input stage and driver applications High current gain. Low collector-emitter saturation voltage. 0.36 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 0.1max 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM PD Tj Tstg Rating 80 65 6 100 200 250 150 -65 to +150 Unit V V V mA mA mW +0.05 0.95-0.05 +0.1 1.25-0.1 +0.15 2.3-0.15 Features www.kexin.com.cn 1 SMD Type KC846S(BC846S) Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain * Collector-emitter saturation voltage* Base-emitter saturation voltage* Base-emitter voltage* Collector-base capacitance Emitter-base capacitance Noise figure Transition frequency * Pulse test: t < 300 s; D < 2% Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) VBE(sat) VBE(ON) Ccb Ceb F fT IC = 10 IE = 10 Testconditons A, IE = 0 A, IC = 0 Min 80 65 6 15 5 250 200 290 90 200 700 900 580 660 2 10 ,f = 1 250 10 700 770 450 250 650 Typ Max Diodes Unit V V V nA A IC = 10 mA, IB = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VCB = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz IC = 200 A, VCE = 5 V, RS = 2 k kHz, f = 200 Hz mV mV mV pF pF dB MHz IC = 20 mA, VCE = 5 V, f = 100 MHz Marking Marking 1D 2 www.kexin.com.cn