KC847S

S MD Type Transistors NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) SOT-363 1.3 +0.1 -0.1 Unit: mm Features High current gain Low collector-emitter saturation voltage 0.65 0.525 0.36 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range R JA Symbol VCBO VCEO VEBO IC PD Rating 50 45 6.0 100 300 2.4 415 -55 to +150 Unit V V V mA mW mW/ /W TJ, Tstg Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) IC = 10 Testconditons A, IE = 0 Min 50 45 6.0 15 5.0 110 630 0.25 0.65 0.58 0.7 0.77 2.0 200 V V V V pF MHz Typ Max Unit V V V nA A IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA Base-Emitter ON Voltage Output Capacitance Transistion frequency VBE(on) Cob fT IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V VCB = 10 V, f = 1.0 MHz IC = 20 mA, VCE = 5.0,f = 100 mHz Marking Marking 1C +0.05 0.95-0.05 +0.1 1.25-0.1 +0.15 2.3-0.15 www.kexin.com.cn 1