KDB2532

KDB2532

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    KDB2532 - N-Channel PowerTrench MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
KDB2532 数据手册
S MD Type MOSFET N-Channel PowerTrench MOSFET KDB2532(FDB2532) TO-263 Features +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V +0.2 8.7-0.2 Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Channel temperature Storage temperature RèJA Tch Tstg PD Symbol VDSS VGSS ID Rating 150 20 79 8 310 2.07 43 175 -55 to +175 Unit V V A A W W/ /W 5.60 1 Gate 2 Drain 3 Source Low Miller Charge www.kexin.com.cn 1 SMD Type MOSFET KDB2532(FDB2532) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Symbol VDSS IDSS IGSS VGS(th) ID=250ìA Testconditons VGS=0V Min 150 1 250 100 2.0 4.0 0.014 0.016 0.016 0.024 0.040 0.048 5870 VDS=25V,VGS=0,f=1MHZ 615 135 VGS = 0V to 10V VGS = 0V to 2V VDS = 75V, Ig=1.0mA ID = 33A 82 11 23 13 19 69 16 VDD = 75V, ID = 33A VGS = 10V, RGS = 3.6 30 39 17 84 ISD = 33A, diSD/dt = 100A/ìs ISD = 33A, diSD/dt = 100A/ìs ISD = 33A ISD = 16A 105 327 1.25 1.0 107 14 pF pF pF nC nC nC nC nC ns ns ns ns ns ns ns nC V V Ù Typ Max Unit V A nA V VDS=120V,VGS=0 VDS=120V,VGS=0,TC=150 VGS= 20V VDS = VGS, ID = 250ìA VGS=10V,ID=33A Drain to source on-state resistance RDS(on) VGS=6V,ID=16A VGS=10V,ID=33A,TC=175 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Reverse Recovery Time Reverse Recovered Charge Source to Drain Diode Voltage Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Qgs2 Qgd tON td(ON) tr td(OFF) tf tOFF trr QRR VSD 2 www.kexin.com.cn
KDB2532 价格&库存

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