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KDB3652

KDB3652

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    KDB3652 - N-Channel PowerTrench MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
KDB3652 数据手册
S MD Type MOSFET N-Channel PowerTrench MOSFET KDB3652 (FDB3652) TO-263 +0.1 1.27-0.1 Features rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 5.28-0.2 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 Low QRR Body Diode +0.2 8.7-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25 TA=25 Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature RèJA RèJC Tch Tstg PD Symbol VDSS VGSS ID Rating 100 20 61 9 150 1.0 43 1.0 175 -55 to +175 Unit V V A A W W/ /W /W 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type MOSFET KDB3652 (FDB3652) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Symbol VDSS IDSS IGSS VGS(th) ID=250ìA Testconditons VGS=0V Min 105 1 250 100 2.0 4.0 0.014 0.016 0.018 0.026 0.035 0.043 2880 VDS=25V,VGS=0,f=1MHZ 390 100 VGS = 0V to 10V VGS = 0V to 2V 41 5 15 VDS = 50 V, ID = 61A,Ig=1.0mA 10 10 146 12 VDD = 50 V, ID = 61A, VGS = 10 V, RGEN = 6.8 85 26 45 107 ISD=61A ISD=30A ISD = 61A, dISD/dt =100A/ìs ISD = 61A, dISD/dt =100A/ìs 1.25 1.0 62 45 53 6.5 pF pF pF nC nC nC nC nC ns ns ns ns ns ns V V ns nC Ù Typ Max Unit V A A nA V VDS=80V,VGS=0 VDS=80V,VGS=0,TC=150 VGS= 20V VDS = VGS, ID = 250ìA VGS=10V,ID=61A Drain to source on-state resistance RDS(on) VGS=6V,ID=30A VGS=10V,ID=61A,TC=175 Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Qgs2 Qgd tON td(ON) tr td(OFF) tf tOFF VSD trr QRR 2 www.kexin.com.cn
KDB3652 价格&库存

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