KDB5690

SMD S MD Type N-Channel PowerTrenchTMMOSFET KDB5690 TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features 32 A, 60 V. RDS(ON) = 0.027 RDS(ON) = 0.032 @ VGS = 10 V @ VGS = 6 V elevated temperature. + .2 5 .2 8 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175 maximum junction temperature rating. 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 Critical DC electrical parameters specified at + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Drain Current Pulsed Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient PD PD TJ, TSTG R R JC JA Symbol VDSS VGS ID Rating 60 20 32 100 58 0.4 -65 to 175 2.6 62.5 Unit V V A A W W/ /W /W 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KDB5690 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy * Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol W DSS IAR BVDSS VGS = 0 V, ID = 250 ID = 250 A Testconditons VDD = 30 V, ID = 32A Transistors IC Min Typ Max 80 32 Unit mJ A V 60 61 1 100 -100 2 2.5 -6.4 0.021 0.027 0.042 0.055 0.024 0.032 50 32 1120 4 A, Referenced to 25 mV/ A nA nA V mV/ VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 ID = 250 A A, Referenced to 25 VGS = 10 V, ID = 16 A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 16 A,TJ = 125 VGS = 6 V, ID =15 A, On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage * Pulse Test: Pulse Width 300 s, Duty Cycle ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD 2.0% VGS = 0 V, IS = 16 A * VDS = 1 V, ID = 16 A,VGS = 10 V * VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN =6 * VDS = 25 V, VGS = 0 V,f = 1.0 MHz VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 16 A m A S pF pF pF 18 18 39 18 33 ns ns ns ns nC nC nC 32 0.92 1.2 A V 160 80 10 9 24 10 23 3.9 6.8 2 www.kexin.com.cn