KDD3670

SMD S MD Type Transistors IC 100V N-Channel PowerTrench MOSFET KDD3670 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features 34 A, 100 V. RDS(ON) = 32m RDS(ON) = 35m @ VGS = 10 V +0.2 9.70-0.2 Low gate charge (57 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1) Drain Current Pulsed Power dissipation @ TC=25 Power dissipation @ Ta=25 Power dissipation @ Ta=25 (Note 1) (Note 1a) (Note 1b) TJ, TSTG R R JC JA Symbol VDSS VGS ID Rating 100 20 34 100 83 Unit V V A A PD 3.8 1.6 -55 to 175 1.8 96 W Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient /W /W 3.80 @ VGS = 6 V +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 www.kexin.com.cn 1 SMD Type KDD3670 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol W DSS IAR BVDSS Testconditons VDD = 50 V, ID = 7.3A (Not 2) ( Not 2) VGS = 0 V, ID = 250 ID = 250 A Transistors IC Min Typ Max 360 7.3 Unit mJ A V 100 92 1 100 -100 2 2.5 -7.2 22 39 24 25 15 31 2490 32 56 35 4 A, Referenced to 25 mV/ A nA nA V mV/ VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 ID = 250 A A, Referenced to 25 VGS = 10 V, ID = 7.3 A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 7.3 A,TJ = 125 VGS = 6 V, ID =7 A, On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0 V, IS = 2.7 A (Not 2) VDS = 50 V, ID = 7.3 A,VGS = 10 V (Note 2) VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN =6 VDS = 50 V, VGS = 0 V,f = 1.0 MHz VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 7.3 A m A S pF pF pF 26 18 84 40 80 ns ns ns ns nC nC nC 2.7 0.72 1.2 A V 265 80 16 10 56 25 57 11 15 2 www.kexin.com.cn