KDD3680

SMD S MD Type Transistors IC 100V N-Channel Power Trench MOSFET KDD3680 TO-252 +0.15 1.50-0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features 25 A, 100 V. RDS(ON) = 46m RDS(ON) = 51m @ VGS = 10 V +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 Low gate charge (38 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1) Drain Current Pulsed Power dissipation @ TC=25 Power dissipation @ Ta=25 Power dissipation @ Ta=25 (Note 1) (Note 1a) (Note 1b) TJ, TSTG R R JC JA Symbol VDSS VGS ID Rating 100 20 25 100 68 Unit V V A A PD 3.8 1.6 -55 to 175 2.2 96 W Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient /W /W 3.80 @ VGS = 6 V www.kexin.com.cn 1 SMD Type KDD3680 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol W DSS IAR BVDSS Testconditons VDD = 50 V, ID = 6.1A (Not 1) ( Not 1) VGS = 0 V, ID = 250 ID = 250 A Transistors IC Min Typ Max 245 6.1 Unit mJ A V 100 -101 10 100 -100 2 2.4 -6.5 32 61 34 25 25 1735 46 92 51 4 A, Referenced to 25 mV/ A nA nA V mV/ VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 ID = 250 A A, Referenced to 25 VGS = 10 V, ID = 6.1A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 6.1 A,TJ = 125 VGS = 6 V, ID =5.8 A, On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0 V, IS = 2.9 A (Not 2) VDS = 50 V, ID = 6.1 A,VGS = 10 V (Note 2) VDD = 50 V, ID = 1 A,VGS = 10 V, RGEN = 10 VDS = 50 V, VGS = 0 V,f = 1.0 MHz VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 6.1 A m A S pF pF pF 25 17 94 34 53 ns ns ns ns nC nC nC 2.9 0.73 1.3 A V 176 53 14 8.5 63 21 38 8.1 9.2 2 www.kexin.com.cn