KDD6030L

SMD S MD Type Transistors IC 30V N-Channel Power Trench MOSFET KDD6030L TO-252 +0.15 1.50-0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features 12 A, 30 V. RDS(ON) = 14.5m RDS(ON) = 21m Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) @ VGS = 10 V @ VGS = 4.5 V +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous @TC=25 @Ta=25 Drain Current Pulsed Power dissipation @ TC=25 Power dissipation @ Ta=25 Power dissipation @ Ta=25 (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) TJ, TSTG (Note 1) R R R JC JA JA Symbol VDSS VGS Rating 30 20 50 Unit V V A A A ID 12 100 56 PD 3.2 1.5 -55 to 175 2.7 45 96 W Operating and Storage Temperature Thermal Resistance Junction to Case /W /W /W Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Ambient (Note 1b) 3.80 www.kexin.com.cn 1 SMD Type KDD6030L Electrical Characteristics Ta = 25 Parameter Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSS VGS(th) Symbol EAS IAR BVDSS Testconditons Single Pulse, VDD = 15 V, ID= 12A (Note 2) ( Not 2) VGS = 0 V, ID = 250 ID = 250 A Transistors IC Min Typ Max 100 12 Unit mJ A V 30 24 1 100 1 1.9 -5 7.7 9.9 11.4 50 47 1230 14.5 21 25 3 A, Referenced to 25 mV/ A nA V mV/ VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V A VDS = VGS, ID = 250 ID = 250 A, Referenced to 25 VGS = 10 V, ID = 12A Static Drain-Source On-Resistance RDS(on) VGS = 4.5 V, ID = 10A VGS = 10 V, ID =12 A,TJ = 125 On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr VGS = 0 V, IS = 2.9 A (Not 2) IF = 12 A, diF/dt = 100 A/ s VDS = 15 V, ID = 12 A,VGS = 5 V (Note 2) VDD = 15 V, ID = 1 A,VGS = 10 V, RGEN = 6 (Note 2) VGS = 15 mV, f = 1.0 MHz VDS = 15 V, VGS = 0 V,f = 1.0 MHz VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 12 A m A S pF pF pF pF 19 13 46 21 28 ns ns ns ns nC nC nC 2.7 0.76 24 13 1.2 A V nS nC 325 150 1.5 10 7 29 12 13 3.5 5.1 2 www.kexin.com.cn