KDR8702H

SMD S MD Type Transistors IC 20V N & P-Channel PowerTrench MOSFET KDR8702H Features N-Ch 3.6 A, 20 V P-Ch -2.6 A, -20 V RDS(ON) = 54m RDS(ON) = 38m RDS(ON) = 110 m RDS(ON) = 80 m @ VGS = 2.5 V @ VGS =4.5V @ VGS =- 2.5 V @ VGS =-4.5V Fast switching speed High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Ambient (Note 1b) Thermal Resistance Junction to Case (Note 1) PD TJ, TSTG R R R JA JA JC Symbol VDSS VGS ID N-Channel 20 12 3.6 15 0.8 P- Channel -20 8 -2.6 -10 Unit V V A A W -55 to 150 146 76 40 /W /W /W www.kexin.com.cn 1 SMD Type KDR8702H Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSS VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 ID = -250 A A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Transistors IC Min 20 -20 Typ Max Unit V A, Referenced to 25 A, Referenced to 25 36 -15 1 -1 100 100 0.6 -0.4 0.8 -0.7 -2 2.5 31 42 41 66 38 54 58 80 110 108 1.5 -1.6 mV/ A nA V mV/ VDS = 16V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = VGS = 12 V, VDS = 0 V 8 V, VDS = 0 V A A VDS = VGS, ID = 250 VDS = VGS, ID = -250 ID = 250 ID = -250 A, Referenced to 25 A, Referenced to 25 VGS = 4.5 V, ID =3.6A Static Drain-Source On-Resistance RDS(on) VGS = 2.5 V, ID = 3.1 A VGS = 4.5 V, ID =3.6 A,TJ = 125 VGS = -4.5 V, ID =-2.6 A Static Drain-Source On-Resistance RDS(on) VGS = -2.5 V, ID =-2.2 A VGS = -4.5 V, ID =-2.6 A,TJ = 125 On-State Drain Current ID(on) VGS = 4.5 V, VDS = 5V VGS = -4.5 V, VDS = -5V Forward Transconductance gFS VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A Gate Resistance RG VGS = 15 mV, f = 1.0 MHz N-Channel VDS = 10 V, VGS = 0 V,f = 1.0 MHz Output Capacitance Coss P-Channel Reverse Transfer Capacitance Crss VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Input Capacitance Ciss N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, ID = 1 A, Turn-On Rise Time tr VGS = 4.5 V, RGEN = 6 N-Ch P-Ch N-Ch P-Ch Turn-Off Delay Time td(off) P-Channel VDD = -10 V, ID = -1 A, Turn-Off Fall Time tf VGS = -4.5 V, RGEN = 6 N-Ch P-Ch N-Ch P-Ch 10 -10 P-Ch m 85 83 A 15 9 1 4.8 650 607 170 165 80 60 8 12 9 11 16 26 7 8 16 22 18 20 29 42 14 16 ns ns ns ns pF pF pF S 2 www.kexin.com.cn SMD Type KDR8702H Electrical Characteristics Ta = 25 Parameter Total Gate Charge Symbol Qg N-Channel VDS =10V,ID=3.6A,VGS=4.5V Gate-Source Charge Qgs (Note 2) P-Channel Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Qgd VDS=-10V,ID=-2.6A,VGS=-4.5V (Note 2) IS VGS = 0 V, IS = 0.7A (Not 2) VGS = 0 V, IS = -0.7A (Not 2) Diode Reverse Recovery Time trr N-Channel IF =3.6A,diF/dt = 100 A/ Maximum Reverse Recovery Current Irm P-Channel Diode Reverse Recovery Charge Qrr IF =-2.6A,diF/dt = 100 A/ s s Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VSD N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Transistors IC Min Typ 7 6 1.3 1.2 2.2 1.6 Max 10 8 Unit nC nC nC 0.7 -0.7 A 0.7 -0.7 16 22 0.6 0.7 5 8 1.2 -1.2 V nS A nC www.kexin.com.cn 3