KDS6910

SMD S MD Type Dual N-Channel Logic Level PowerTrench MOSFET KDS6910 IC IC Features 7.5 A, 30 V. RDS(ON) = 13m RDS(ON) = 17m Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Case (Note 1) Thermal Resistance Junction to Ambient (Note 1a) TJ, TSTG R R JC JA Symbol VDSS VGS ID Rating 30 20 7.5 20 1.6 Unit V V A A PD 1 0.9 -55 to 175 40 78 W /W /W www.kexin.com.cn 1 SMD Type KDS6910 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = 250 ID = 250 A Min 30 28 1 10 100 -100 1 1.8 -4.7 10.6 13 14.5 20 36 1130 VDS = 15 V, VGS = 0 V,f = 1.0 MHz 300 100 VGS = 15 mV, f = 1.0 MHz 2.4 9 VDD = 15 V, ID = 1 A,VGS = 10 V, RGEN = 6 5 26 7 17 9 VDS = 15 V, ID = 7.5 A(Note 2) 3.1 2.7 1.3 VGS = 0 V, IS = 1.3 A (Not 2) IF =7.5A diF/dt = 100 A/ s 24 13 1.2 18 10 42 14 24 13 13 17 20 3 Typ Max IC IC Unit V mV/ A A, Referenced to 25 VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V,TJ = 55 VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 ID = 250 A nA nA V mV/ A, Referenced to 25 VGS = 10 V, ID =7.5 A Static Drain-Source On-Resistance RDS(on) VGS = 4.5 V, ID = 6.5 A VGS = 10 V, ID =7.5 A,TJ = 125 On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at Vgs=10V Total Gate Charge Vgs=5V Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd IS VSD trr Qrr VGS = 10 V, VDS = 5V VDS = 5 V, ID = 7.5A m A S pF pF pF ns ns ns ns nC nC nC nC A V nS nC 2 www.kexin.com.cn