KDS8958

SMD S MD Type Transistors IC Dual N & P-Channel PowerTrench MOSFET KDS8958 Features N-Channel 7.0 A, 30 V RDS(ON) = 0.028 RDS(ON) = 0.040 P-Channel -5 A, -30 V RDS(ON) = 0.052 RDS(ON) = 0.080 Fast switching speed High power and handling capability in a widely used surface mount package @ VGS =- 10 V @ VGS =-4.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JA JC Symbol VDSS VGS ID PD N-Channel 30 20 7 20 2 1.6 P- Channel 30 20 -5 -20 Unit V V A A W PD 1 0.9 -55 to 150 78 40 W /W /W www.kexin.com.cn 1 SMD Type KDS8958 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSS VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 ID = -250 A A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch 1 Transistors IC Min 30 -30 Typ Max Unit V A, Referenced to 25 A, Referenced to 25 25 -22 1 -1 100 100 1.6 -1.7 -4.3 4 21 32 27 41 28 42 40 52 78 80 3 -3 -1 mV/ VDS = 24V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = VGS = 20V, VDS = 0 V 20 V, VDS = 0 V A A A nA V VDS = VGS, ID = 250 VDS = VGS, ID = -250 ID = 250 ID = -250 A, Referenced to 25 A, Referenced to 25 mV/ VGS = 10 V, ID =7A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 7 A,TJ = 125 VGS = 4.5 V, ID =6 A VGS = -10 V, ID =-5 A Static Drain-Source On-Resistance RDS(on) VGS = -10 V, ID =-5 A,TJ = 125 VGS = -4.5 V, ID =-4A On-State Drain Current ID(on) VGS = 10 V, VDS = 5V VGS = -10 V, VDS = -5V VDS = 5V, ID = 7A VDS = -5V, ID = -5A Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Ciss Coss P-Channel Crss td(on) tr td(off) tf Qg VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Channel VDD = 10 V, ID = 1 A, VGS = 10 V, RGEN = 6 (Note 2) N-Channel VDS = 10 V, VGS = 0 V,f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, ID = -1 A, VGS = -10 V, RGEN = 6 N-Channel VDS =15V,ID=7A,VGS=10V(Note 2) (Note 2) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel Gate-Drain Charge Qgd VDS=-15V,ID=-5A,VGS=-10V(Note 2) P-Ch N-Ch P-Ch 20 -20 P-Ch m 58 58 A 19 11 789 690 173 306 66 77 6 6.7 10 9.7 18 19.8 5 12.3 16 14 2.5 2.2 2.1 1.9 nC 12 13.4 18 19.4 29 35.6 12 22.2 26 23 ns nC pF pF pF ns ns ns Forward Transconductance gFS S Gate-Source Charge Qgs nC 2 www.kexin.com.cn SMD Type KDS8958 Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Symbol IS VSD VGS = 0 V, IS = 1.3A (Not 2) VGS = 0 V, IS = -1.3A (Not 2) Testconditons N-Ch P-Ch N-Ch P-Ch Transistors IC Min Typ Max 1.3 -1.3 Unit A V 0.74 -0.76 1.2 -1.2 www.kexin.com.cn 3