KDV262

S MD Type Silicon Epitaxial Planar Diode KDV262 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm +0.05 0.3-0.05 +0.05 0.85-0.05 Features High Capacitance Ratio : C2V/C25V=12.5(Typ.) Low Series Resistance : rs=0.6 (Typ.) 0.475 0.375 +0.1 2.6-0.1 1.0max Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e ve rs e V o lta g e P e a k R e ve rs e V o lta g e J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re R a n g e S ym b o l VR V RM Tj T s tg V a lu e 34 3 5 (R L = 1 0 K 125 -5 5 to + 1 2 5 ) U n it V V Electrical Characteristics Ta = 25 Parameter Reverse Voltage Reverse Current Capacitance Symbol VR IR C 2V C 25V Capacitance Ratio Series Resistance Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) (V R=2~25V) 0.02 C 2V/C 25V C 25V/C 28V rs V R = 5V, f = 470 MHz Conditions IR = 1 A Min 34 10 33 2.6 12 1.03 0.6 0.8 35.5 2.85 12.5 38 3.0 Typ Max Unit V nA pF V R = 28 V f = 1 MHz;V R = 2 V f = 1 MHz;V R = 25 V Marking Marking UQ +0.05 0.1-0.02 +0.1 1.3-0.1 www.kexin.com.cn 1