KDV287

S MD Type Silicon Epitaxial Planar Diode KDV287 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm High Capacitance Ratio : C2V/C25V=7.6(Typ.) Low Series Resistance : rs=1.9 (Typ.) 0.475 +0.1 2.6-0.1 1.0max Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 0.375 Absolute M axim um R atings T a = 25 P aram eter R everse V oltage P eak R everse V oltage Junction Tem perature S torage Tem perature R ange S ym bol VR V RM Tj T stg V alue 30 35 (R L =10K 125 -55 to +125 ) U nit V V Electrical Characteristics Ta = 25 Parameter Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance Note : Available in matched group for capacitance to 6%. C(Max.)-C(Min.) C(Min.) (V R=2~25V) 0.06 Symbol VR IR C 2V C 25V C 2V/C 25V rs V R = 5V, f = 470 MHz Conditions IR = 1 A Min 30 10 4.2 0.53 7.3 1.9 2.3 5.7 0.68 Typ Max Unit V nA pF V R = 28 V f = 1 MHz;V R = 2 V f = 1 MHz;V R = 25 V Marking Marking UP +0.05 0.1-0.02 +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 www.kexin.com.cn 1