KDW2504P

SMD S MD Type Dual P-Channel 2.5V Specified PowerTrench MOSFET KDW2504P IC IC Features -3.8 A, - 20 V. RDS(ON) = 0.043 RDS(ON) = 0.070 Low gate charge High performance trench technology for extremely low RDS(ON) Extended VGSS range ( 12V) for battery applications @ VGS = -4.5 V @ VGS =-2.5V TSSOP-8 Unit: mm Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Ambient (Note 1b) TJ, TSTG R R JA JA Symbol VDSS VGS ID Rating -20 12 -3.8 -30 Unit V V A A W PD 1 0.6 -55 to 150 125 208 /W /W www.kexin.com.cn 1 SMD Type KDW2504P Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = -250 ID = -250 A Min -20 -16 -1 -100 100 A -0.6 -1 3 0.036 0.043 0.056 0.070 0.049 0.069 -15 13.2 1015 VDS = -10 V, VGS = 0 V,f = 1.0 MHz 446 118 11 VDD = -5 V, ID = -1 A,VGS = -4.5 V, RGEN = 6 18 34 34 9.7 VDS = -5 V, ID = -3.8 A,VGS=4.5V(Note 2) 2.2 2.4 -0.83 VGS = 0 V, IS =- 0.83 A (Note 2) -0.7 -1.2 20 32 55 55 16 -1.5 Typ Max IC IC Unit V mV/ A nA nA V mV/ A, Referenced to 25 VDS = -16 V, VGS = 0 V VGS = -12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = -250 ID = -250 A, Referenced to 25 VGS =-4.5 V, ID =-3.8 A Static Drain-Source On-Resistance RDS(on) VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID =-3.8 A,TJ = 125 On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Vgs=5V Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Notes: 1R JA ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = -4.5 V, VDS = -5V VDS = -5 V, ID = -3.5A A S pF pF pF ns ns ns ns nC nC nC A V is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is JC defined as the solder mounting surface of the drain pins. R by the user's board design. is guaranteed by design while R CA is determined a) R JA is 125 /W (steady state) when mounted on a 1 inch2 copper pad on FR-4. b) R JA is 208 /W (steady state) when mounted on a minimum copper pad on FR-4. 300 s, Duty Cycle 2.0% 2. Pulse Test: Pulse Width 2 www.kexin.com.cn