KDW2521C

SMD S MD Type Complementary PowerTrench MOSFET KDW2521C IC IC Features N-Channel 5.5 A, 20 V RDS(ON) = 21m RDS(ON) = 35m P-Channel -3.8 A, 20 V RDS(ON) = 43 m RDS(ON) = 70 m @ VGS =- 4.5 V @ VGS =-2.5V @ VGS = 4.5 V @ VGS =2.5V TSSOP-8 Unit: mm High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) (Note 1b) TJ, TSTG R JA Symbol VDSS VGS ID N-Channel 20 12 5.5 30 P- Channel -20 12 -3.8 -30 1 0.6 -55 to 150 125 208 Unit V V A A W PD /W /W www.kexin.com.cn 1 SMD Type KDW2521C Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 ID = -250 Zero Gate Voltage Drain Current IDSS A A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch 0.6 -0.6 0.8 -1.0 -3.2 Min 20 -20 14 -16 1 -1 Typ Max IC IC Unit V Breakdown Voltage Temperature Coefficient A, Referenced to 25 A, Referenced to 25 mV/ VDS = 16V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = VGS = 12V, VDS = 0 V 12 V, VDS = 0 V A A A nA V Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IGSS VGS(th) 100 100 1.5 -1.5 VDS = VGS, ID = 250 VDS = VGS, ID = -250 ID = 250 ID = -250 A, Referenced to 25 A, Referenced to 25 mV/ 3.0 17 24 23 36 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -15 26 13.2 1082 1030 277 280 130 120 8 11 8 18 24 34 8 34 12 9.7 2 2.2 3 2.4 20 20 27 32 38 55 16 55 17 16 ns ns nC nC nC pF pF pF ns 56 49 21 35 34 43 70 69 A m VGS = 4.5 V, ID =5.5A Static Drain-Source On-Resistance RDS(on) VGS = 2.5 V, ID = 4.2 A VGS = 4.5 V, ID =5.5 A,TJ = 125 VGS = -4.5 V, ID =-3.8 A Static Drain-Source On-Resistance RDS(on) VGS = -2.5 V, ID =-3.0 A VGS = -4.5 V, ID =-3.8A,TJ = 125 On-State Drain Current ID(on) VGS = 4.5 V, VDS = 5V VGS = -4.5 V, VDS = -5V VDS = 5V, ID = 5.5A VDS = -5V, ID = -3.5A Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Ciss Coss P-Channel Crss td(on) VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Channel VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 (Note 2) N-Channel VDS = 10 V, VGS = 0 V,f = 1.0 MHz Forward Transconductance gFS S Turn-On Rise Time tr N-Ch P-Ch ns Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(off) tf Qg Qgs Qgd P-Channel VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 N-Channel VDS =10V,ID=5.5A,VGS=4.5V (Note 2) P-Channel VDS=-5V,ID=-3.8A,VGS=-4.5V (Note 2) (Note 2) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 www.kexin.com.cn SMD Type KDW2521C Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Notes: 1. R JA IC IC Symbol IS VSD Testconditons N-Ch P-Ch VGS = 0 V, IS = 0.83A (Not 2) VGS = 0 V, IS = -0.83A (Not 2) N-Ch P-Ch Min Typ Max 0.83 -0.83 Unit A V 0.7 -0.7 1.2 -1.2 is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference JC is defined as the solder mounting surface of the drain pins. R is determined by the user's board design. a) R b) R JA JA is guaranteed by design while R CA is 125 /W (steady state) when mounted on a 1 inch²copper pad on FR-4. is 208 /W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% www.kexin.com.cn 3