KI1303EDL

SMD S MD Type P-Channel 2.5-V (G-S) MOSFET KI1303EDL Transistors IC Features 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 ) TA=25 -TA=70 Pulsed drain current Continuous source current (diode conduction) * Power dissipation * -TA=25 TA=70 Symbol VDS VGS ID IDM IS PD Tj,Tstg -0.28 0.34 0.22 -55 to +150 0.72 0.58 2.5 -0.24 0.29 0.19 5 secs -20 12 0.67 0.54 Steady State Unit V V A A A W Operating junction and storage temperature range * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI1303EDL Electrical Characteristics Ta = 25 Parameter Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 4.5 V Transistors IC Min -0.6 Typ Max Unit V 1 -1 -5 1.5 0.360 0.430 0.400 0.480 0.560 0.700 1.7 -1.2 1.9 2.5 A A A VDS = -20 V, VGS = 0 V VDS =-20 V, VGS = 0 V, TJ = 70 VDS =-5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1 A Drain-source on-state resistance rDS(on) VGS = -3.6V, ID =-0.7 A VGS = -2.5V, ID = -0.3 A Forward transconductance Diode forward voltage Total gate charge * Gate-source charge * Gate-drain charge * Turn-on time gfs VSD Qg Qgs Qgd td(on) tr VDS = -10 V, ID = -1 A IS = -1 A, VGS = 0 V S V VDS =-10V ,VGS = -4.5 V , ID= -1A 0.45 0.44 180 300 655 900 850 700 nC Turn-off time Source-Drain Reverse Recovery Time * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf trr VDD = -10V , RL = 10 , ID =-1A , VGEN =-4.5V , RG = 6 410 560 530 ns IF = -1 A, di/dt = 100 A/ s 435 Marking Marking LD 2 www.kexin.com.cn