KI1304BDL

SMD S MD Type N-Channel 30-V (D-S) MOSFET KI1304BDL Transistors IC Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 ) -Continuous drain current (TJ = 150 ) -Pulsed drain current Continuous Source Drain Diode Current Tc=25 Ta=25 Power dissipation -Power dissipation -Tc=25 Tc=70 Ta=25 Ta=70 PD Tc=25 Tc=70 Ta=25 Ta=70 Symbol VDS VGS ID ID IDM IS 0.31 0.28 0.37 0.24 0.34*1,2 0.22*1,2 -55 to +150 W Rating 30 12 0.90 0.71 0.85*1,2 0.68*1,2 Unit V V A A A A PD Tj,Tstg W Operating junction and storage temperature range *1 Surface Mounted on 1" X 1" FR4 Board. *2 t = 5 sec Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient*1,2 Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 315 285 Maximum 375 340 Unit /W Steady State *1 Surface Mounted on 1" X 1" FR4 Board. *2 Maximum under steady state conditions is 360 /W. www.kexin.com.cn 1 SMD Type KI1304BDL Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Drain-source on-state resistance Forward transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate charge * Total gate charge * Gate-source charge * Gate-drain charge * Gate Resistance Turn-on time Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qg Qgs Qgd Rg td(on) tr Turn-off time Continuous Source-Drain Diode Current Pulse Diode Forward Current* Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf IS ISM VSD trr Qrr ta tb IF=0.28A,di/dt=100A/ s,TJ=25 IS = 0.28 A TC = 25 VDD = 15V , RL = 22 , ID =0.68A , VGEN =4.5V , RG = 1 f=1MHz VDS =15V ,VGS =2.5 V , ID=0.9 VDS =15V ,VGS = 4.5 V , ID=0.9 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = VGS, ID =250 A VDS = 0 V, VGS = 12 V 0.6 Testconditons VGS = 0 V, ID = 250 A ID= 250 A Min 30 Transistors IC Typ Max Unit V 27.3 3 1.3 100 1 5 4 0.216 0.270 0.308 0.385 2 100 30 20 1.8 1.1 0.4 0.6 1.5 10 30 5 10 2.3 15 45 25 15 0.31 4 0.8 50 105 34 16 1.2 75 160 2.7 1.7 mv/ V nA A A VDS =30 V, VGS = 0 V VDS =30 V, VGS = 0 V, TJ = 70 VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID =0.9 VGS = 2.5V, ID =0.75 VDS =15 V, ID =0.9 S pF nC ns A V ns nC ns ns Marking Marking KF 2 www.kexin.com.cn